IEEE Honors SanDisk's Groundbreaking X3 Technology And Innovative Multi-Level Cell Solutions
ISSCC CONFERENCE, SAN FRANCISCO, CALIF., February 9, 2009 - SanDisk Corporation today announced that it has received the Lewis Winner Outstanding Paper Award at the 2009 IEEE International Solid State Circuits Conference (ISSCC), which is being held Feb 8-12 at the San Francisco Marriot Hotel. The award was presented to Yan Li, who delivered a paper at last year's conference entitled "A 16Gb 3b/Cell NAND Flash Memory in 56nm with 8MB/s Write Rate," which detailed key advancements leading to the development of 3-bit-per-cell (X3) memory on 56 nanometer (nm) technology.
"On behalf of the team at SanDisk, I am honored to receive this prestigious award in recognition of our successful development of the 3-bit-per-cell technology," said Yan Li, senior design manager, SanDisk. "Utilizing patented All Bit Line (ABL) architecture with advanced proprietary programming algorithms and multilevel data storage management schemes, we produced the X3 NAND flash memory chip without sacrificing performance or reliability."
"Multi-level flash memory design is a complex topic, particularly when one is concerned with achieving high write-rate. This outstanding paper describes a clear advance in the combination of high level and high rate, achieving 3 bits-per-cell at 8 MB/s," said Dr. Kenneth C. Smith, ISSCC Awards Chair.
SanDisk co-developed 3-bit-per-cell technology with its memory technology and manufacturing partner, Toshiba. X3 enables high manufacturing efficiency and lower die cost, while maintaining performance and reliability found in conventional multilevel cell (MLC) chips.
SanDisk Corporation, the inventor and world's largest supplier of flash storage cards, is a global leader in flash memory - from research, manufacturing and product design to consumer branding and retail distribution. SanDisk's product portfolio includes flash memory cards for mobile phones, digital cameras and camcorders; digital audio/video players; USB flash drives for consumers and the enterprise; embedded memory for mobile devices; and solid state drives for computers. SanDisk (www.sandisk.com/corporate) is a Silicon Valley-based S&P 500 company, with more than half its sales outside the United States.
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This press release contains certain forward-looking statements, including expectations for technological advancements and new product introductions that are based on our current expectations and involve numerous risks and uncertainties that may cause these forward-looking statements to be inaccurate. Risks that may cause these forward-looking statements to be inaccurate include among others: difficulties in producing x3 NAND, and our products may not perform as expected and the other risks detailed from time-to-time in our Securities and Exchange Commission filings and reports, including, but not limited to, our most recent Annual Report filed on Form 10-K and our subsequent Quarterly Reports filed on Form 10-Q. We do not intend to update the information contained in this press release